Special Solutions

DISCO takes up every challenge, regardless of material or product, to make the best and most precise results. To meet every customer’s goal, DISCO provides a variety of complete solutions for high-end applications.

All DGS applications are offered for various materials up to 300 mm in combination with:

  • Wafer lamination
  • Wafer mounting
  • UV irradiation of UV-tapes
  • Inspection (chipping inspection, die strength testing, etc.)
  • Vacuum sealed packaging under N2

Dicing Before Grinding (DBG)

In contrast to most other techniques, the wafer is initially grooved and then ground in the DBG process. This technique offers outstanding advantages: the wafer can be ground to an ultra-thin final thickness, a high quality finish on the backside is always ensured, and the risk of fracture can be excluded (no edge chipping!).

Plasma Etching

“Plasma Etching” is a process that serves to relieve tensile forces in the chip and is deployed primarily in combination with DBG, by modifying the surface finish of the substrate and rounding the chip edges by means of gas medium application. The process significantly enhances the mechanical strength of chips.


TAIKO is a new wafer back grinding method developed by DISCO CORPORATION. It is deployed only on the inner circular area of the wafer, while leaving an edge of approx. 3 mm (depending on the wafer diameter). The method is a considerable improvement in terms of the handling of thin wafers by increasing the mechanical strength of the wafer, while reducing the risk of warpage. The TAIKO process also enables the production of ultra-thin, self supporting wafers that permits further processing without specialist handling equipment.

Surface Planarization

Surface planarization eliminates bump dents and shoulder overhangs by cutting them, solving the issue of bump height variation and surface roughness. This process can be used for various materials, including gold, copper, solder, polyimide, and others. It can also be used for tape planarization before grinding to reach strong performance in TTV (Total Thickness Variation), even if the wafer has high surface bumps.

Stealth Laser

The advanced, latest generation developed by DISCO Corp enables optimum utilisation of the substrate. The “Stealth Laser” forms a modified SD layer within the thickness of the substrate to enable subsequent separation of the die. This automatic high-speed process increases productivity and also dispenses with subsequent cleaning. The Stealth Laser can be used to process Multi-Project Wafers (MPW) with different chip dimensions, or wafers for micro electromechanical systems (MEMS), as the dry laser process prevents damage to sensitive membranes.

Stealth Dicing on SiC

Laser stealth dicing for SiC provides improved quality for workpieces that are difficult and slow to process by blade dicing. Dry processing does not require cleaning and applies no force to the wafer, producing less waste by modifying only the internal part of the workpiece. SD laser achieves high die strength and contributes to street reduction due to extremely thin kerf width. By controlling the position of the SD laser, damage from front or backside chipping can be reduced.

Ultrasonic Dicing Technology

Dicing with ultrasonic technology has been developed as a new application to support the processing of electronic components (ceramic parts) and optical devices, discs and transmission components. Using ultrasonic technology will enable the processing of materials such as glass and ceramics, which until now have been difficult to cut with blades.

Camtek Automatic Optical Inspektion Tool

The Camtek optical inspection tool uses 3D and 2D metrology to inspect framed and unframed wafers of various thicknesses. This fully automated system scans and analyzes wafers for bump height deviations, structural irregularities and other surface defects. Inspection capabilities include glass and MEMs structures.

IR/White Light

IR Sensor with a wavelength of 1300nm can measure different material, such as Silicon, Glass, Quartz, SiC, Sapphire, LiTaO3, etc. Measurement range for Silicon is from 20µm to 1000µm.
Furthermore the tool is equipped with two opposite chromatic white light sensors. This makes the measurement of waferstacks and compound material, plus warpage and surface condition, possible. Surface imperfections up to 600µm can be measured.